Method for manufacturing ohmic contacts for compound semiconductors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 24, 1998
Grant Date -
N/A
app pub date -
Dec 28, 1994
filing date -
Feb 23, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor. An AuGeNi layer is formed on the n-type III-V compound semiconductor, where the thickness of the AuGeNi layer is between 50 and 200 nm and both the germanium and the nickel concentration in the AuGeNi layer are less than 1 percent by weight. An Au layer with a thickness of between 250 and 1000 nm is applied to the AuGeNi layer. These layers are not alloyed but tempered either at a temperature between 430.degree. and 480.degree. C. for a period between 5 and 20 seconds or at a temperature between 360.degree. and 400.degree. C. for a period between 40 and 180 minutes. The metal semiconductor contact produced in this way has a low contact resistance and is free from the inhomogeneities of alloyed AuGeNi contacts.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully