Method for the manufacture of semiconductor devices with optimized hydrogen content
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United States of America Patent
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Feb 17, 1998
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Apr 24, 1996
filing date -
Apr 24, 1996
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Abstract
A semiconductor device which includes a layer of hydrogenated semiconductor alloy material has the hydrogen content of that semiconductor layer optimized by the inclusion of a hydrogen-rich body of reservoir material in the device. Migration of hydrogen from the reservoir to the semiconductor layer provides and maintains an optimum hydrogen content in the semiconductor layer.
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