Process for the manufacture of thin films of semiconductor material
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United States of America Patent
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Feb 3, 1998
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N/A
app pub date -
Sep 12, 1996
filing date -
Sep 13, 1995
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Abstract
The process includes the following steps: implantation of ions (12) in a semi-conducting wafer (10), to create a cleavage layer of gaseous microblisters (16) in the wafer, heat treatment of the wafer, in order to cause separation of a surface layer (18) from the rest of the wafer, along the layer of microblisters. According to the invention, the implantation is carried out at a depth equal to or greater than a given minimum depth so that the thin film obtained is rigid, and so that the heat treatment can release it.
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