SOI structure with a deep thin oxide layer prepared by ION implantation at high energy followed by thermal treatment
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 13, 1998
Issued Date -
N/A
app pub date -
Sep 7, 1994
filing date -
May 15, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for preparing an SOI structure with a deep thin oxide layer which comprises, in succession, a first ion implantation at an oxygen fluence within the range of 10.sup.15 -10.sup.16 ions/cm.sup.2, thermal treatment at a temperature within the range of 600.degree.-900.degree. C., a second ion implantation at an oxygen fluence within the range of 2.times.10.sup.17 -8.times.10.sup.17 ions/cm.sup.2, and a final thermal treatment at a temperature within the range of 1150.degree.-1400.degree. C.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully