Turn-off, MOS-controlled, power semiconductor component
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United States of America Patent
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Dec 16, 1997
Issued Date -
N/A
app pub date -
Mar 24, 1995
filing date -
Apr 11, 1991
priority date (Note) -
Expired
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Abstract
In a MOS-controlled turn-off thyristor (MCT), a conventional integral cell with a combined emitter and short-circuiting function is replaced by a separate DMOS cell (D) and emitter cell (E). The DMOS cell (D) contains a five-layer sequence of cathode short-circuit region (18), first channel region (19), second base layer (7), first base layer (8) and emitter layer (9). The emitter cell (E) contains a four-layer sequence of first emitter region (20), second base layer (7), first base layer (8) and emitter layer (9). This basic structure produces a component which is easy to produce and is distinguished by a high reverse-blocking capability.
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