Method of forming guard ringed schottky diode
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United States of America Patent
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Dec 9, 1997
Grant Date -
N/A
app pub date -
Feb 2, 1996
filing date -
Feb 2, 1996
priority date (Note) -
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Abstract
A method of forming a guard ring for a Schottky diode is comprised of the steps of forming anode and cathode contact openings. A layer of doped material is deposited and etched to create spacers in the anode and cathode openings. The outdiffusion of dopant from the spacers is controlled to form a guard ring in the well without affecting the active area. The method can be used to create a p-type guard ring in an n-well or an n-type guard ring in a p-well. A Schottky diode constructed according to the method is also disclosed.
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