Method of automatically growing a single crystal

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United States of America Patent

PATENT NO 5690732
SERIAL NO

07891914

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Abstract

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A method of automatically growing a single crystal by using a floating-zone method in which radio-frequency induction heating is utilized, wherein the shape of molten zone of a sintered rod material is judged by comparing an anode voltage in a radio-frequency oscillation tube with a radio-frequency current, or a change in the shape of molten zone is judged depending of a change in a radio-frequency current during the growth of the sintered rod material, and power for heating is controlled on the basis of the judgement.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE FOR RESEARCH IN INORGANIC MATERIALSTSUKUBA-SHI IBARAKI 305

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishizawa, Yoshio Tsukuba, JP 19 32
Otani, Shigeki Tsukuba, JP 7 37
Tanaka, Takaho Tsukuba, JP 6 63

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