Method for forming semiconductor layer of thin film transistor by using temperature difference
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United States of America Patent
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Nov 11, 1997
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app pub date -
Jan 20, 1995
filing date -
Jan 20, 1995
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Abstract
The present invention relates to a method for manufacturing a thin film transistor which can improve the yield, characteristics and reliability of the thin film transistor by selectively forming a semiconductor layer on a desired portion of a substrate using a temperature difference on the surface of the substrate achieved by heating the substrate with a lamp. The method comprises the steps of forming a black matrix layer of metal on a portion of the whole surface of an insulating glass substrate, forming an insulating layer for protecting the substrate on the whole substrate including the black matrix layer, forming source/drain electrodes on the insulating layer over the black matrix, selectively forming a semiconductor layer on the insulating layer including the source/drain electrodes, forming a gate insulating layer and forming a gate electrode.
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