Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
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United States of America Patent
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Nov 4, 1997
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N/A
app pub date -
Oct 22, 1993
filing date -
Oct 23, 1992
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Abstract
The present invention is for enlarging a freedom of layout including an air bridge pattern and enhancing the availability for various purposes. A mask layer including an air bridge pattern is formed on a (100) plane of a silicon substrate, isotropic etching is carried out until a point of intersection between tangents of a peripheral curved plane comes to under the air bridge pattern plane, and then an air bridge is formed by means of anisotropic etching.
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