Importance

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Abstract

A clock delay circuit for generating a delay for a sense amplifier release signal in an integrated circuit semiconductor memory device is disclosed. Rather than utilize traditional programmable capacitors that must be trimmed on a die by die basis, the novel clock delay circuit disclosed utilizes a small ROM, EPROM, EEPROM or FLASH array coupled to a bit line emulator to provide a clock delay matched to the larger main array. The size of the small memory array is on the order of 5 to 10 bit lines by 5 to 10 word lines. One cell within the small array is fixed to be continuously selected. The selected cell is coupled to the clock delay node along with the bit line emulator. The bit line emulator models the capacitance of the actual bit line used in the main array. However, the circuit is constructed so that a much larger signal is generated by the delay circuit such that sense amplifiers detect the correct signal. The CMOS based clock delay circuit uses the emulated array to generate a delta or margin that accurately tracks the delays within the main array with variations in temperature, supply voltage and process.

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First Claim