Silicone wafer cleaning method
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United States of America Patent
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Oct 28, 1997
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N/A
app pub date -
Mar 17, 1995
filing date -
Mar 17, 1995
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Abstract
The present invention provides a method for cleaning a silicon wafer with a cleaning fluid, comprising 35 to 65% by weight of HNO.sub.3, 0.05 to 0.5% by weight of HF, 0.05 to 0.5% by weight of HCl, 0.002 to 0.1% by weight of a surface-active agent, and water. The silicon wafer cleaning method involves comprising treating the surface of a silicon wafer with said cleaning fluid. According to the present method, etching of the silicon wafer surface can be carried out simply with the amount of the etching being controlled to several tens .ANG., and particularly about 20 to 30 .ANG., and without damage to the smoothness of the surface. In addition, contamination with gold and other heavy metals of the order of 10.sup.12 atoms/cm.sup.2 can be decreased to not more than 1/100.
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