Shallow trench isolation in integrated circuits
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 14, 1997
Grant Date -
N/A
app pub date -
Aug 21, 1996
filing date -
Dec 1, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention concerns fabrication of oxide-filled isolation trenches in integrated circuits. The invention etches a network of trenches in the surface of a uniformly doped wafer which has experienced no substantial processing steps. Such a wafer will have little, if any, surface damage. Such a wafer will etch to the same depth everywhere, because two major factors which affect etching rate are (a) surface damage and (b) doping non-uniformity, and these factors are absent. The trenches are then filled with oxide. They define islands upon which devices (such as transistors) may now be fabricated.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully