Method of planarizing a layer of material
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United States of America Patent
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Sep 16, 1997
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N/A
app pub date -
May 23, 1995
filing date -
May 23, 1995
priority date (Note) -
Expired
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Abstract
A method of planarizing a layer of material having a pre-determined thickness above a circuit feature on a semiconductor device is provided. A first layer of material is formed atop the surface of the semiconductor substrate and circuit feature to a pre-determined thickness. A thin, continuous trace layer of doped silicon oxide material is formed atop the first layer, and then a second layer of material is formed atop the trace layer. The second layer is planarized, and planarization is terminated upon reaching the trace layer, thereby providing a semiconductor with a planar layer.
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