Amorphous semiconductor thin film light emitting diode
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United States of America Patent
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Aug 12, 1997
Grant Date -
N/A
app pub date -
Mar 31, 1995
filing date -
Mar 31, 1994
priority date (Note) -
Expired
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Abstract
An amorphous semiconductor thin film light emitting diode comprising of a first electrode metal sheet substrate, amorphous semiconductor layers and a second optically transparent electrode. The first electrode metal sheet substrate acts as the support of the electrode and provides ruggedness, good thermal stability and dissipation of heat, good reflectance and flexibility. The device may further include electrically insulating layers which cause a pattern of light to be emitted by the diode, by controlling the passage of current through areas of the amorphous semiconductor layers.
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