Capacitive pressure transducer structure with a sealed vacuum chamber formed by two bonded silicon wafers
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United States of America Patent
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Aug 12, 1997
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N/A
app pub date -
Apr 30, 1996
filing date -
Jul 7, 1993
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Abstract
A capacitive pressure transducer structure and a method for manufacturing the same comprises a transducer structure having a contiguous diaphragm structure (2), which at least in some parts is conducting to the end of forming a first electrode (4) of a transducing capacitor, a substrate (3) which is permanently bonded to a first surface of the diaphragm structure (2) and comprises a second electrode (5) of the transducing capacitor, spaced at a distance from and aligned essentially at the first electrode (4), and a silicon structure (1), which is permanently bonded to a second surface of the diaphragm structure (2), incorporating a space (21) suited to accommodate the deflection of the first electrode (4). The angle .alpha. formed between vertical walls (11) of the space (21) and the first electrode (4) is smaller than or equal to 90.degree., and the material surrounding the space (21) is silicon or doped silicon.
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