Method for producing N-type semiconducting diamond
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United States of America Patent
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Aug 5, 1997
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N/A
app pub date -
Aug 3, 1995
filing date -
Aug 3, 1995
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Abstract
A method of making n-type semiconducting diamond is disclosed, which is doped with boron-10 at the time of diamond formation and bombarded with neutrons for in-situ conversion of boron-10 to lithium-7, while filtering the neutrons from high energy components during irradiation.
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