High-resolution negative photoresist with wide process latitude
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United States of America Patent
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Jul 22, 1997
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N/A
app pub date -
Apr 5, 1995
filing date -
Oct 29, 1992
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Expired
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Abstract
The invention relates to a chemically amplified negative photoresist which can be developed in aqueous alkaline media, which contains a radiation-sensitive acid generator and a compound which reduces the solubility of the resist in aqueous alkaline solutions in the presence of acid, and a polyhydroxyl compound of the formula I ##STR1## in which n is an integer between 2 and 6, R is hydrogen, halogen, C.sub.1 -C.sub.4 alkoxy or C.sub.1 -C.sub.4 alkyl, and Z is an n-valent radical which is unsubstituted or substituted by one or more substituents from the group consisting of hydroxyl, halogen and C.sub.1 -C.sub.4 alkoxy, and is selected from the group consisting of: a) aliphatic radicals having 1 to 12 carbon atoms, b) cycloaliphatic radicals having 5 to 20 carbon atoms, c) aromatic radicals having 6 to 20 carbon atoms and d) radicals having 7 to 30 carbon atoms which comprise at least two different structural units selected from aliphatic, cycloaliphatic or aromatic groups. The resists described make it possible to reduce the demands made on the focusing accuracy during imagewise exposure.
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