Methods of making vertical microelectronic field emission devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 15, 1997
Issued Date -
N/A
app pub date -
Sep 13, 1995
filing date -
Mar 4, 1992
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A vertical microelectronic field emitter is formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully