Sense amplifier including MOS transistors having threshold voltages controlled dynamically in a semiconductor memory device
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United States of America Patent
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Jul 8, 1997
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N/A
app pub date -
Jan 11, 1996
filing date -
Jan 12, 1995
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Abstract
N channel sense amplifier transistors have their backgate potentials set to a backgate precharge potential higher than a potential intermediate between an operation power supply potential and a ground potential prior to start of sensing operation, and then lowered following the lowering of an n common source node potential during the sensing operation. The n common source node is precharged to the intermediate potential. The backgate precharge potential is set no greater than a potential of the intermediate potential plus a pn junction diffusion, to suppress a leakage current from the backgate to source or drain of each of the sense amplifier transistors. P channel sense amplifier transistors have also their backgate potential set to a precharge potential lower than the intermediate potential prior to sensing operation and raised following the rise of a p common source node potential.
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