Programmable semiconductor memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 8, 1997
Grant Date -
N/A
app pub date -
Nov 13, 1995
filing date -
Nov 12, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A programmable semiconductor memory is disclosed which can be fabricated with an MOS process of low complexity and which takes up little space. The memory comprises a MOS field-effect transistor having an antifuse region between the gate electrode and the drain region. Prior to application of a programming voltage, the antifuse region electrically isolates the gate electrode and the drain region from each other. On application of the programming voltage to the gate electrode, which is greater than the supply voltage applied between the drain and the source, the antifuse region changes to a low-impedance state.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully