Semiconductor device having a p-type ohmic electrode structure
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United States of America Patent
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Jul 1, 1997
Issued Date -
N/A
app pub date -
Feb 27, 1996
filing date -
Jan 14, 1992
priority date (Note) -
Expired
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Abstract
A p-type ohmic metal electrode for use with a group II-VI semiconductor device. The p-type ohmic metal electrode is made of a group II-IV p-type semiconductor layer having a group II element other than zinc dispersed in that layer disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the group II-IV semiconductor layer including the group II element other than zinc. Also disclosed is a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium and the above ohmic metal electrode disposed on the group II-IV semiconductor device. Additionally, a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium, a layer of a group II element other than zinc disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the layer of the group II element other than zinc is disclosed.
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