Method for producing semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 1, 1997
Issued Date -
N/A
app pub date -
Jan 25, 1995
filing date -
Apr 9, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully