GaP light emitting substrate and a method of manufacturing it
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United States of America Patent
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Jul 1, 1997
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N/A
app pub date -
Dec 19, 1994
filing date -
Sep 30, 1992
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Abstract
A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single crystal substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) is formed on an n-type GaP single crystal substrate to prepare a multi-layer GaP substrate, then an n-type GaP layer, a nitrogen doped n-type GaP layer and a p-type GaP layer are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less when the multi-layer GaP substrate is prepared.
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