Method of severing a thin film semiconductor device
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United States of America Patent
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Jun 10, 1997
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N/A
app pub date -
May 11, 1992
filing date -
Jun 27, 1991
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Abstract
A method of severing a thin film semiconductor device. The semiconductor device includes a substrate having a first electrode region formed thereon, a semiconductor body formed of layers of thin film semiconductor alloy material disposed upon the base electrode, a transparent, electrically conductive second electrode deposited atop the semiconductor body, and a containment layer of polymeric material associated with the first or second electrode in at least one region to permit subsequent severing of the device into a plurality of devices through said containment layer region.
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