Method for producing high efficiency light-emitting diodes and resulting diode structures
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United States of America Patent
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May 20, 1997
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N/A
app pub date -
Oct 7, 1994
filing date -
Oct 7, 1994
priority date (Note) -
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Abstract
A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting wafer and diode structure are also disclosed.
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