Method of fabricating high threshold metal oxide silicon read-only-memory transistors
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United States of America Patent
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May 20, 1997
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N/A
app pub date -
Jun 7, 1995
filing date -
Jan 7, 1994
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Expired
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Abstract
A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.
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