Plasma etch process and TiSi.sub.x layers made using the process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 6, 1997
Grant Date -
N/A
app pub date -
Apr 8, 1993
filing date -
Apr 8, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation of Ne atoms into said silicon, depositing a metal layer over the Ne etched surface and then rapidly thermally causing the metal layer to react with the underlying silicon.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully