Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films
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United States of America Patent
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May 6, 1997
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N/A
app pub date -
Oct 3, 1994
filing date -
Oct 3, 1994
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Expired
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Abstract
A method for developing large area highly oriented polycrystalline ferroelectric thin films using spin-on sol-gel deposition and laser crystallization techniques that allow for precise control of temperature distribution. The present invention improves quality, reliability, performance and cost effective production of ferroelectric non-volatile random access memory (FNVRAM) on thermally sensitive silicon and gallium arsenide semiconductor substrates compatible with very large scale integrated circuit technologies. The method is time effective, as crystallization is performed in three seconds as compared to thirteen hours in a conventional furnace for 1 cm.times.1 cm wafer. In addition, crystallization of the film is further achieved without exposing the underneath device structure to detrimental high temperature annealing conditions. The present invention results in minimization of thermal budget, interdiffusion of substrates/electrodes/films and phase segregation, and increased compatibility of PZT ferroelectric thin films with thermally sensitive semiconductor substrates.
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