Method of depositing thin passivating film on microminiature semiconductor devices
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United States of America Patent
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Apr 15, 1997
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N/A
app pub date -
Dec 4, 1995
filing date -
Dec 4, 1995
priority date (Note) -
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Abstract
A thin conformal passivating dielectric film is deposited by ECR-CVD on an IC chip comprising semiconductor devices each of which includes a sub-micron-width irregularly shaped gate electrode. A protective layer of patterned resist is formed overlying each passivated device. Additional dielectric material is then deposited by ECP-CVD, at a temperature below the glass transition temperature of the resist, on the surface of the chip. Subsequently, in a lift-off step, the patterned resist together with the additional dielectric material overlying the resist is removed from the chip.
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