In-situ cleaning of plasma treatment chamber
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United States of America Patent
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Apr 15, 1997
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N/A
app pub date -
Jul 22, 1994
filing date -
Sep 10, 1993
priority date (Note) -
Expired
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Abstract
A cleaning of a plasma chamber is done by a NF.sub.3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF.sub.3 plasma treatments, a low pressure (lower than 10.sup.-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor, silane, fluorine, a hydrate compound, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, water vapor and hydride compounds.
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