Semiconductor device having crystalline thin film transistors

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United States of America Patent

PATENT NO 5614733
SERIAL NO

08354502

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Abstract

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A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.

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Patent Owner(s)

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SEMICONDUCTOR ENERGY LABORATORY CO INC398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takayama, Toru Kanagawa, JP 534 28168
Takemura, Yasuhiko Kanagawa, JP 582 31804
Zhang, Hongyong Kanagawa, JP 462 30622

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Patent Citation Ranking

  • 253 Citation Count
  • H01L Class
  • 99.00 % this patent is cited more than
  • 28 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2039226214669482313771001 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 90100 +0255075100125150175200225250275300325350375400425

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