Semiconductor device having crystalline thin film transistors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Mar 25, 1997
Issued Date -
N/A
app pub date -
Dec 12, 1994
filing date -
Mar 12, 1993
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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SEMICONDUCTOR ENERGY LABORATORY CO INC | 398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Takayama, Toru | Kanagawa, JP | 534 | 28168 |
# of filed Patents : 534 Total Citations : 28168 | |||
Takemura, Yasuhiko | Kanagawa, JP | 582 | 31804 |
# of filed Patents : 582 Total Citations : 31804 | |||
Zhang, Hongyong | Kanagawa, JP | 462 | 30622 |
# of filed Patents : 462 Total Citations : 30622 |
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Patent Citation Ranking
- 253 Citation Count
- H01L Class
- 99.00 % this patent is cited more than
- 28 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

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Dec 27, 2012 | P | Published | |
Jun 27, 2012 | F | Filing |

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