Thin-film transistor element having a structure promoting reduction of light-induced leakage current
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United States of America Patent
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Mar 25, 1997
Issued Date -
N/A
app pub date -
Aug 11, 1995
filing date -
Mar 15, 1993
priority date (Note) -
Expired
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Abstract
A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.
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