Top gate thin-film transistor
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United States of America Patent
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-
Mar 25, 1997
Grant Date -
N/A
app pub date -
Jun 27, 1995
filing date -
Jul 8, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A transparent insulation film is formed on a glass substrate. Source and drain electrodes are formed on the transparent insulation film with their ends in spaced and opposing relation. The entire face of the substrate is treated with PH.sub.3 plasma to diffuse P atoms to form a doped surface layer. An a-Si semiconductor layer is formed on the doped surface layer so as to span a space between the source and drain electrodes with the opposite end portions of the semiconductor layer overlying those electrodes. A gate insulation film is formed on the semiconductor layer to extend all over the substrate. A gate electrode is formed of metal on the top of the gate insulation film 6 such that the opposite side edges of the gate electrode are recessed inwardly of the edges of the source and drain electrodes. An excimer laser beam is radiated against the face of the substrate with the gate electrode acting as a mask so that the laser-irradiated regions of the semiconductor layer comprise source and drain regions of n.sup.+ poly-Si.
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