Apparatus for microwave processing in a magnetic field
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United States of America Patent
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Mar 11, 1997
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app pub date -
Feb 10, 1994
filing date -
Jun 15, 1989
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Abstract
A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
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