Method of forming single-crystalline thin film

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United States of America Patent

PATENT NO 5607899
SERIAL NO

08393747

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Abstract

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A thin film strongly orienting specific crystal axes is deposited on a polycrystalline or amorphous base material in accordance with laser deposition in a simpler device through a simpler process. A target is irradiated with a laser beam, for forming a thin film in accordance with laser ablation of depositing a substance scattered from the target on a base material. In order to form the thin film, prepared are conditions capable of forming a film orienting a specific crystal axis substantially perpendicularly to the base material in substantially parallel arrangement of the target and the base material. Under the conditions, a film is deposited on the base material which is inclined at a prescribed angle .theta. with respect to the target. It is possible to deposit a film strongly orienting a specific crystal axis in a plane substantially parallel to the base material surface by inclining the base material under the specific film forming conditions.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA JAPAN OSAKA
TOKYO ELECTRIC POWER COMPANY INCORPORATED THE1-3 UCHISAIWAI-CHO 1-CHOME CHIYODA-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujino, Kousou Osaka, JP 4 320
Hara, Tsukushi Yokohama, JP 17 463
Hayashi, Noriki Osaka, JP 31 479
Ishii, Hideo Yokohama, JP 81 1331
Okuda, Shigeru Osaka, JP 17 409
Yoshida, Noriyuki Osaka, JP 59 934

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