Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

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United States of America Patent

PATENT NO 5605171
SERIAL NO

08517001

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Abstract

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An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

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Patent Owner(s)

Patent OwnerAddress
U CHICAGO ARGONNE LLC5801 SOUTH ELLIS AVENUE CHICAGO IL 60637

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tam, Shiu-Wing Downers Grove, IL 4 22

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