Film thickness and free carrier concentration analysis method and apparatus
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United States of America Patent
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Feb 18, 1997
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app pub date -
Oct 7, 1994
filing date -
Oct 7, 1994
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Abstract
The method determines the thickness and the free carrier concentration of at least one layer of a structure. An exposed surface of the structure is irradiated using spectral radiation, and the measured reflectance spectrum is compared to a calculated spectrum. Using algorithms that include terms representative of complex refractive indices, layer thickness, dielectric constants, and free carrier concentrations, values are iteratively assigned to the thickness and free carrier concentration parameters so as to produce a best fit relationship between the compared spectra, and to thereby determine those parameters.
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