Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces
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United States of America Patent
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Feb 4, 1997
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N/A
app pub date -
Nov 21, 1994
filing date -
Oct 15, 1993
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Expired
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Abstract
A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.
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