Laser annealing method for a semiconductor thin film
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United States of America Patent
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Jan 7, 1997
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app pub date -
Mar 13, 1995
filing date -
Mar 14, 1994
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Abstract
A laser annealing method for a semiconductor thin film for irradiating the semiconductor thin film with a laser beam having a section whose outline includes a straight-line portion, so as to change the crystallinity of the semiconductor thin film is provided, wherein the semiconductor thin film is overlap-irradiated with the laser beam while the laser beam is shifted in a direction different from a direction along the straight-line portion. A thin film semiconductor device fabricated by use of the laser annealing method is also provided.
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