Laser diode sensor
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United States of America Patent
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Jan 7, 1997
Grant Date -
N/A
app pub date -
Apr 21, 1995
filing date -
Apr 21, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A chemical sensor uses a semiconductor diode laser having a surface active region. A laser structure, including an active layer, a cladding layer, a barrier layer and a grating layer, is constructed on a substrate. A contact layer is deposited on a surface of the laser structure. One or more electrodes are positioned on the contact layer. A segmented electrode has a first contact pad, a second contact pad, and a surface active region between the first and second pads. A surface active region is created between the two electrodes. The tail of the lasing signal interacts with surface features of the diode laser or with chemical materials or probes in contact with the surface of the diode laser or in contact with coatings on the surface of the diode laser. Chemical changes in the ambient environment induce changes in the laser signal. The modified laser signal output is detected by a detector region integral with or separated from the laser structure. The laser diode sensor has applications in fields involving chemical sensing and identification, including automotive, environmental and medical fields.
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