Vacuum processing apparatus
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United States of America Patent
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Jan 7, 1997
Grant Date -
N/A
app pub date -
Jun 23, 1994
filing date -
Jun 24, 1993
priority date (Note) -
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Abstract
A vacuum processing apparatus includes: a processing chamber for performing a film formation process to a semiconductor wafer in a vacuum; a mounting member provided in the processing chamber and having a mounting surface for mounting a target object; an electrostatic chuck, provided to the mounting surface of the mounting member, for chucking the semiconductor wafer; a heating mechanism for heating the semiconductor wafer; and a processing gas supply mechanism for supplying a processing gas for performing the film formation process to the semiconductor wafer into the processing chamber. The mounting member has a base, a first insulating layer formed on the surface of the base, and a second insulating layer formed on the first insulating layer, and has a conductive layer between the first insulating layer and the second insulating layer on the mounting surface side of the mounting member to obtain the above electrostatic chuck constituted by the first insulating layer, the second insulating layer, and the conductive layer, and the heating mechanism has a heating member provided between the first insulating layer and the second insulating layer on the lower surface side of the mounting member.
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