Alumina multilayer wiring substrate provided with high dielectric material layer
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United States of America Patent
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Dec 31, 1996
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N/A
app pub date -
Apr 3, 1995
filing date -
Apr 3, 1995
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Expired
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Abstract
An alumina multilayer wiring substrate having a high capacitance in the substrate on which a VLSI is to be mounted to effectively eliminate electrical noise(s) which may hinder the operation of the VLSI at high speed (frequency). The wiring substrate comprises: (a) a first alumina layer; (b) a first metallized layer on the first alumina layer; (c) a dielectric material layer on the first metallized layer; (d) a cermet layer on the dielectric material layer; (e) a second metallization layer on the cermet layer; (f) a second alumina layer on the second metallization layer; (g) a first conductor electrically connecting to and extending from the second metallized layer through the second alumina layer; and (h) a second conductor electrically extending from the first metallized layer through the cermet layer and dielectric material layer, through but not electrically connecting the first metallized layer, and through the second alumina layer.
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