Gallum nitride group compound semiconductor laser diode
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United States of America Patent
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Dec 10, 1996
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Apr 19, 1995
filing date -
Apr 20, 1994
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Abstract
A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).
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