HgCdTe S-I-S two color infrared detector
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United States of America Patent
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Dec 10, 1996
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N/A
app pub date -
Jun 27, 1994
filing date -
Dec 18, 1991
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Expired
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Abstract
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.
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