Method for processing a thin film using an energy beam
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United States of America Patent
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Dec 3, 1996
Issued Date -
N/A
app pub date -
Aug 30, 1994
filing date -
Aug 31, 1993
priority date (Note) -
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Abstract
A thin film on a substrate is patterned so as to include an area in which a thin film transistor is to be formed and an area of another patterned thin film or a semiconductor device, and so as to have a size larger than the total size of the areas. Next, the patterned thin film is annealed. After the annealing, a part of the inside area of the patterned thin film is patterned. The part of the thin film is used for forming a thin film transistor.
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