Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation
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United States of America Patent
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Dec 3, 1996
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N/A
app pub date -
Jun 2, 1995
filing date -
Nov 25, 1992
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Abstract
The present invention provides a bottom anti-reflective coating compositions having a very low level of metal ions and a process for producing such compositions utilizing specially treated ion exchange resins. The present invention also provides photoresists produced using such bottom anti-reflective coating compositions and a method for producing semiconductor devices using such photoresists.
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