Method of etching patterns in III-V material with accurate depth control
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United States of America Patent
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Oct 22, 1996
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N/A
app pub date -
May 25, 1995
filing date -
May 25, 1995
priority date (Note) -
Expired
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Abstract
A method of accurately controlling the depth of etched gratings in uniform or layered quaternary III-V material. A native oxide is selectively grown on the area of the quaternary to be patterned and this native oxide is subsequently removed to engrave the surface. Periodic repetition of the oxide growth/removal steps results in gratings of the desired depths.
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