Method for the production of a reflector
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United States of America Patent
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Oct 15, 1996
Issued Date -
N/A
app pub date -
Sep 2, 1994
filing date -
Mar 5, 1992
priority date (Note) -
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Abstract
In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.
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