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Abstract

Method for laying at least one semiconductive plate with a specific thickness and size on a support, wherein it includes the following stages: the bombardment by ions of one face of a semiconductive substrate so as to create there a film of gaseous microbubbles along a splitting plane of the substrate, the ion implantation energy being provided so as to obtain the film of gaseous microbubbles at a depth corresponding to the specific thickness of the semiconductive plate, the ions being selected from rare gas or hydrogen gas ions, the rendering integral on the face of the substrate of the support, illuminating by a laser beam of the zone of the face of the substrate corresponding to the plate to be placed through the support, the luminous energy transmitted by the beam through the support needing to be sufficient so as to induce in the corresponding region of the film of gaseous microbubbles a temperature sufficient to cause splitting of the plate of the support and provoke increasing of the adherence of the plate on the support, separating the substrate with respect to the support, this separation separating the plate from the substrate and retaining it on the support.

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First Claim