Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated
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United States of America Patent
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Sep 24, 1996
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N/A
app pub date -
Jul 12, 1994
filing date -
Mar 27, 1991
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Abstract
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
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